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| CMLM0205 M U LT I D I S C R E T E MODULE TM Central TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module TM consisting of a single N-Channel MOSFET and a Low VF Schottky diode packaged in a space saving PICOminiTM SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. * Combination: N-Channel MOSFET and Low VF Schottky Diode. SOT-563 CASE MARKING CODE: SYMBOL PD TJ, Tstg JA SYMBOL VDS VDG VGS ID IS IDM ISM SYMBOL VRRM IF IFRM IFSM C25 350 -65 to +150 357 UNITS mW C C/W UNITS V V V mA mA A A UNITS V mA A A UNITS nA nA A A mA V V V V mmhos MAXIMUM RATINGS (SOT-563 Package): (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms 60 60 40 280 280 1.5 1.5 40 500 3.5 10 MAX 100 100 1.0 500 ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IGSSF VGS=20V, VDS=0V IGSSR VGS=20V, VDS=0V IDSS VDS=60V, VGS=0V IDSS VDS=60V, VGS=0V, Tj=125C ID(ON) VGS=10V, VDS 2VDS(ON) 500 BVDSS VGS=0V, ID=10A 60 VGS(th) VDS=VGS, ID=250A 1.0 VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, Tj=125C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, Tj=125C gFS VDS 2VDS(ON), ID=200mA 80 2.5 1.0 0.15 2.0 3.5 3.0 5.0 R0 (12-October 2004) Central SYMBOL Crss Ciss Coss ton toff VSD CMLM0205 TM M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE MIN MAX 5.0 50 25 20 20 1.2 UNITS pF pF pF ns ns V Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) TEST CONDITIONS VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDS=25V, VGS=0, f=1.0MHz VDD=30V, VGS=10V, ID=200mA, RG=25, RL=150 VGS=0V, IS=400mA ELECTRICAL CHARACTERISTICS D1 (TA=25C) IR VR= 10V IR VR= 30V BVR IR= 500A VF IF= 100A VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz 20 100 40 0.13 0.21 0.27 0.35 0.47 50 A A V V V V V V pF SOT-563 - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 MARKING CODE: C25 LEAD CODE: 1) GATE Q1 2) SOURCE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) DRAIN Q1 R0 (12-October 2004) |
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